Leading IC manufacturers are introducing forms of strained silicon and SiGe for next generations of semiconductor products. The industry has identified new metrology capabilities as critical to enable process control for strained silicon and SiGe structures. However, available methods do not meet the requirements for adoption into production process control. With technology created specifically for rapid characterization of band-engineered semiconductor films, Xitronix provides the definitive solution to this gap in semiconductor metrology capabilities.

2011 Thin Solid Films Paper

2007 Frontiers of Characterization of Metrology for Nanoelectronics

US Patent 8,300,227

US Patent 7,391,507

US Patent 7,239,392

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